ON Semiconductor HUF75339G3
Product Information
Detailed Description:
N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-247-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Base Part Number:
HUF75
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 20V
Rds On (Max) @ Id, Vgs:
12mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
55V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2000pF @ 25V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Customer Reference:
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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You can order ON Semiconductor brand products with HUF75339G3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor HUF75339G3. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor HUF75339G3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14525610 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14525610.
Yes. We ship HUF75339G3 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is HUF75339G3. It features n-channel 55v 75a (tc) 200w (tc) through hole to-247-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Base Part Number: huf75. The maximum gate charge and given voltages include 130nc @ 20v. It has a maximum Rds On and voltage of 12mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 55v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2000pf @ 25v. The product is available in through hole configuration. The product ultrafet™, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 200w (tc). This product use mosfet (metal oxide) technology.
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