ON Semiconductor FQT4N25TF
Product Information
Maximum Continuous Drain Current:
830 mA
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.3 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
1.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.75 Ω
Manufacturer Standard Lead Time:
18 Weeks
Detailed Description:
N-Channel 250V 830mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
FQT4
Gate Charge (Qg) (Max) @ Vgs:
5.6nC @ 10V
Rds On (Max) @ Id, Vgs:
1.75Ohm @ 415mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
200pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
SOT-223-4
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
830mA (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship FQT4N25TF Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQT4N25TF. While 830 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.75 ω maximum drain source resistance. It has typical 18 weeks of manufacturer standard lead time. It features n-channel 250v 830ma (tc) 2.5w (tc) surface mount sot-223-4. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Base Part Number: fqt4. The maximum gate charge and given voltages include 5.6nc @ 10v. It has a maximum Rds On and voltage of 1.75ohm @ 415ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 200pf @ 25v. The product qfet®, is a highly preferred choice for users. sot-223-4 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 830ma (tc). The product carries maximum power dissipation 2.5w (tc). This product use mosfet (metal oxide) technology.
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