Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
15 nC @ 5 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
38 W
Series:
QFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.07mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
45 mΩ
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 60V 22.5A (Tc) 38W (Tc) Through Hole TO-220F
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FQPF3
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 5V
Rds On (Max) @ Id, Vgs:
35mOhm @ 11.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1040pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
22.5A (Tc)
Customer Reference:
Power Dissipation (Max):
38W (Tc)
Technology:
MOSFET (Metal Oxide)
