ON Semiconductor FQP6N60C
Product Information
Detailed Description:
N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FQP6
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2.75A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
810pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Customer Reference:
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship FQP6N60C Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQP6N60C. It features n-channel 600v 5.5a (tc) 125w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fqp6. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 2ohm @ 2.75a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 810pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (tc). The product carries maximum power dissipation 125w (tc). This product use mosfet (metal oxide) technology.
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