ON Semiconductor FQP19N20
Product Information
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
10.2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
140 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.38mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
150 mΩ
Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 200V 19.4A (Tc) 140W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FQP1
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 9.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1600pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
19.4A (Tc)
Customer Reference:
Power Dissipation (Max):
140W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FQP19N20 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQP19N20. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 31 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.2mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 140 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.38mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 150 mω maximum drain source resistance. It has typical 17 weeks of manufacturer standard lead time. It features n-channel 200v 19.4a (tc) 140w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fqp1. The maximum gate charge and given voltages include 40nc @ 10v. It has a maximum Rds On and voltage of 150mohm @ 9.7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1600pf @ 25v. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 19.4a (tc). The product carries maximum power dissipation 140w (tc). This product use mosfet (metal oxide) technology.
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