Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
8.7 nC @ 5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
65 W
Series:
QFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.4mm
Width:
4.7mm
Length:
10.1mm
Maximum Drain Source Resistance:
180 mΩ
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12.8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
4 Weeks
Detailed Description:
N-Channel 100V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FQP1
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 5V
Rds On (Max) @ Id, Vgs:
180mOhm @ 6.4A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
520pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
12.8A (Tc)
Customer Reference:
Power Dissipation (Max):
65W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FQP13N10L. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 8.7 nc @ 5 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 65 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.4mm. Furthermore, the product is 4.7mm wide. Its accurate length is 10.1mm. It provides up to 180 mω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 12.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 4 weeks of manufacturer standard lead time. It features n-channel 100v 12.8a (tc) 65w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fqp1. The maximum gate charge and given voltages include 12nc @ 5v. It has a maximum Rds On and voltage of 180mohm @ 6.4a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 520pf @ 25v. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 12.8a (tc). The product carries maximum power dissipation 65w (tc). This product use mosfet (metal oxide) technology.
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