ON Semiconductor FQNL1N50BBU

ON Semiconductor

Product Information

Detailed Description:
N-Channel 500V 270mA (Tc) 1.5W (Tc) Through Hole TO-92-3
Vgs(th) (Max) @ Id:
3.7V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Base Part Number:
FQNL1
Gate Charge (Qg) (Max) @ Vgs:
5.5nC @ 10V
Rds On (Max) @ Id, Vgs:
9Ohm @ 135mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
270mA (Tc)
Customer Reference:
Power Dissipation (Max):
1.5W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FQNL1N50BBU. It features n-channel 500v 270ma (tc) 1.5w (tc) through hole to-92-3. The typical Vgs (th) (max) of the product is 3.7v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). Base Part Number: fqnl1. The maximum gate charge and given voltages include 5.5nc @ 10v. It has a maximum Rds On and voltage of 9ohm @ 135ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 150pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 270ma (tc). The product carries maximum power dissipation 1.5w (tc). This product use mosfet (metal oxide) technology.

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FQNL1N50B(Datasheets)

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