ON Semiconductor FQI13N50CTU

FQI13N50CTU ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 500V 13A (Tc) 195W (Tc) Through Hole I2PAK (TO-262)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number:
FQI1
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 10V
Rds On (Max) @ Id, Vgs:
480mOhm @ 6.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2055pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I2PAK (TO-262)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Customer Reference:
Power Dissipation (Max):
195W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQI13N50CTU. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 500v 13a (tc) 195w (tc) through hole i2pak (to-262). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. Base Part Number: fqi1. The maximum gate charge and given voltages include 56nc @ 10v. It has a maximum Rds On and voltage of 480mohm @ 6.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 2055pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i2pak (to-262) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 13a (tc). The product carries maximum power dissipation 195w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Material Chgs 14/Oct/2020(PCN Assembly/Origin)
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FQI13N50C(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Passivation Material 14/May/2008(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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