Maximum Continuous Drain Current:
5.8 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.6 nC @ 5 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
QFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
350 mΩ
Manufacturer Standard Lead Time:
47 Weeks
Detailed Description:
N-Channel 100V 5.8A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD7N10
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 5V
Rds On (Max) @ Id, Vgs:
350mOhm @ 2.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.8A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Technology:
MOSFET (Metal Oxide)
