ON Semiconductor FQD12N20TM
Product Information
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
55 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
280 mΩ
Manufacturer Standard Lead Time:
4 Weeks
Detailed Description:
N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD1
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 4.5A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
910pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D-Pak
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 55W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14522579 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14522579.
Yes. We ship FQD12N20TM Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQD12N20TM. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 55 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 280 mω maximum drain source resistance. It has typical 4 weeks of manufacturer standard lead time. It features n-channel 200v 9a (tc) 2.5w (ta), 55w (tc) surface mount d-pak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fqd1. The maximum gate charge and given voltages include 23nc @ 10v. It has a maximum Rds On and voltage of 280mohm @ 4.5a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 910pf @ 25v. The product qfet®, is a highly preferred choice for users. d-pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (tc). The product carries maximum power dissipation 2.5w (ta), 55w (tc). This product use mosfet (metal oxide) technology.
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