ON Semiconductor FQB8N60CTM
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.13 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Channel Type:
N
Minimum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
1.2 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Height:
4.83mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB8
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 3.75A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1255pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.5A (Tc)
Customer Reference:
Power Dissipation (Max):
3.13W (Ta), 147W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship FQB8N60CTM Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQB8N60CTM. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.13 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 2v. It provides up to 1.2 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 7.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 4.83mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 15 weeks of manufacturer standard lead time. It features n-channel 600v 7.5a (tc) 3.13w (ta), 147w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb8. The maximum gate charge and given voltages include 36nc @ 10v. It has a maximum Rds On and voltage of 1.2ohm @ 3.75a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1255pf @ 25v. The product qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.5a (tc). The product carries maximum power dissipation 3.13w (ta), 147w (tc). This product use mosfet (metal oxide) technology.
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