Dimensions:
10.67 x 9.65 x 4.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
158 W
Height:
4.58mm
Width:
9.65mm
Length:
10.67mm
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
2 + Tab
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB5N90
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
2.3Ohm @ 2.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1550pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.4A (Tc)
Customer Reference:
Power Dissipation (Max):
3.13W (Ta), 158W (Tc)
Technology:
MOSFET (Metal Oxide)
