Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
24.5 nC @ 5 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.75 W
Series:
QFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
21 mΩ
Manufacturer Standard Lead Time:
25 Weeks
Detailed Description:
N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D2PAK (TO-263)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB50N06
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 5V
Rds On (Max) @ Id, Vgs:
21mOhm @ 26.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1630pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D2PAK (TO-263)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
52.4A (Tc)
Customer Reference:
Power Dissipation (Max):
3.75W (Ta), 121W (Tc)
Technology:
MOSFET (Metal Oxide)
