ON Semiconductor FQB4N80TM
Product Information
Maximum Drain Source Voltage:
800 V
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.13 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Channel Type:
N
Minimum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
3.6 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Height:
4.83mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB4
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.95A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
880pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.9A (Tc)
Customer Reference:
Power Dissipation (Max):
3.13W (Ta), 130W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FQB4N80TM. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FQB4N80TM.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14522504 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14522504.
Yes. We ship FQB4N80TM Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQB4N80TM. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.13 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 3v. It provides up to 3.6 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 4.83mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 800v 3.9a (tc) 3.13w (ta), 130w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb4. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 3.6ohm @ 1.95a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 880pf @ 25v. The product qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.9a (tc). The product carries maximum power dissipation 3.13w (ta), 130w (tc). This product use mosfet (metal oxide) technology.
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