ON Semiconductor FQB3N60CTM

ON Semiconductor

Product Information

Detailed Description:
N-Channel 600V 3A (Tc) 75W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB3
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Rds On (Max) @ Id, Vgs:
3.4Ohm @ 1.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
565pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Customer Reference:
Power Dissipation (Max):
75W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQB3N60CTM. It features n-channel 600v 3a (tc) 75w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb3. The maximum gate charge and given voltages include 14nc @ 10v. It has a maximum Rds On and voltage of 3.4ohm @ 1.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 565pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 3a (tc). The product carries maximum power dissipation 75w (tc). This product use mosfet (metal oxide) technology.

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FQB3N60C(Datasheets)
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Passivation Material 14/May/2008(PCN Design/Specification)

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