ON Semiconductor FQA46N15
Product Information
The FQA46N15, ON Semiconductor, is a through-hole and versatile N-Channel MOSFET providing high-speed and reliable switching performance in multiple applications.
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
85 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Series:
QFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
20.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
42 mΩ
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 150V 50A (Tc) 250W (Tc) Through Hole TO-3P
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Base Part Number:
FQA4
Gate Charge (Qg) (Max) @ Vgs:
110nC @ 10V
Rds On (Max) @ Id, Vgs:
42mOhm @ 25A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
3250pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3P
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Customer Reference:
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship FQA46N15 Internationally to many countries around the world.
The FQA46N15 is a high-performance N-Channel MOSFET manufactured by ON Semiconductor. With its robust design and impressive specifications, this MOSFET is well-suited for a wide range of applications requiring high power and voltage capabilities. The FQA46N15 from ON Semiconductor is a versatile N-Channel MOSFET with low on-resistance, high current and voltage ratings, and enhanced thermal performance, ensuring efficient power switching and reliable operation.
Product Specifications:
Low On-Resistance:
One of the standout features of the FQA46N15 is its low on-resistance (RDS (on)) value. The low on-resistance reduces conduction losses, allowing the device to operate at higher currents with minimal power dissipation. With a typical RDS (on) of just a few milliohms, this MOSFET offers efficient power delivery while minimizing heat dissipation.
Enhanced Thermal Performance:
To ensure reliable operation under high-power conditions, the FQA46N15 incorporates advanced thermal management features. The MOSFET is designed with a low thermal resistance between the semiconductor die and the package, allowing efficient heat dissipation. This feature helps to keep the device's temperature within acceptable limits, thus maintaining its performance and extending its lifespan.
FQA46N15, ON Semiconductor, 3-Pin, N-Channel MOSFET: Versatile Applications
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