ON Semiconductor FQA34N25

ON Semiconductor

Product Information

Base Part Number:
FQA3
Detailed Description:
N-Channel 250V 34A (Tc) 245W (Tc) Through Hole TO-3P
Input Capacitance (Ciss) (Max) @ Vds:
2750pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 250µA
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 17A, 10V
Supplier Device Package:
TO-3P
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Power Dissipation (Max):
245W (Tc)
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FQA34N25. Base Part Number: fqa3. It features n-channel 250v 34a (tc) 245w (tc) through hole to-3p. The product's input capacitance at maximum includes 2750pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 80nc @ 10v. It has a maximum Rds On and voltage of 85mohm @ 17a, 10v. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3, sc-65-3. The product carries maximum power dissipation 245w (tc). The continuous current drain at 25°C is 34a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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FQA34N25(Datasheets)

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