Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
18.9mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.4 Ω
Manufacturer Standard Lead Time:
49 Weeks
Detailed Description:
N-Channel 900V 11A (Tc) 300W (Tc) Through Hole TO-3P
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Base Part Number:
FQA11
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
Rds On (Max) @ Id, Vgs:
1.1Ohm @ 5.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
3290pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3P
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Customer Reference:
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
