Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
625 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.78mm
Width:
0.98mm
Length:
1.7mm
Maximum Drain Source Resistance:
1.8 Ω
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
830 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
P-Channel 20V 830mA (Ta) 625mW (Ta) Surface Mount SC-89-3
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-89, SOT-490
Base Part Number:
FDY102
Gate Charge (Qg) (Max) @ Vgs:
3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
500mOhm @ 830mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
135pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SC-89-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
830mA (Ta)
Customer Reference:
Power Dissipation (Max):
625mW (Ta)
Technology:
MOSFET (Metal Oxide)
