Maximum Continuous Drain Current:
50 A
Width:
5.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
Power56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
P
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
±16 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.25V
Maximum Drain Source Resistance:
13.5 mΩ
Manufacturer Standard Lead Time:
23 Weeks
Detailed Description:
P-Channel 40V 50A (Tc) 75W (Tj) Surface Mount 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDWS9
Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 50A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
2320pF @ 20V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Customer Reference:
Power Dissipation (Max):
75W (Tj)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDWS9510L-F085. While 50 a of maximum continuous drain current. Furthermore, the product is 5.9mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of power56. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 75 w maximum power dissipation. It features a maximum gate source voltage of ±16 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.25v . It provides up to 13.5 mω maximum drain source resistance. It has typical 23 weeks of manufacturer standard lead time. It features p-channel 40v 50a (tc) 75w (tj) surface mount 8-dfn (5.1x6.3). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdws9. The maximum gate charge and given voltages include 37nc @ 10v. It has a maximum Rds On and voltage of 13.5mohm @ 50a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±16v. The product's input capacitance at maximum includes 2320pf @ 20v. The product powertrench®, is a highly preferred choice for users. 8-dfn (5.1x6.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 50a (tc). The product carries maximum power dissipation 75w (tj). This product use mosfet (metal oxide) technology.
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