Category:
Power MOSFET
Dimensions:
6.5 x 3.56 x 1.6mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
3.56mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
50 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1187 pF@ 10 V
Length:
6.5mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
45 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.6mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Detailed Description:
P-Channel 20V 6A (Ta) 3W (Ta) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
FDT43
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 4.5V
Rds On (Max) @ Id, Vgs:
50mOhm @ 6A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1187pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SOT-223-4
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Customer Reference:
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
