ON Semiconductor FDS86267P

FDS86267P ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
19 Weeks
Detailed Description:
P-Channel 150V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
FDS86
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Rds On (Max) @ Id, Vgs:
255mOhm @ 2.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1130pF @ 75V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDS86267P. It has typical 19 weeks of manufacturer standard lead time. It features p-channel 150v 2.2a (ta) 1w (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: fds86. The maximum gate charge and given voltages include 16nc @ 10v. It has a maximum Rds On and voltage of 255mohm @ 2.2a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 150v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 1130pf @ 75v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.2a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology.

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Qualify 2nd supplier 13/Aug/2020(PCN Assembly/Origin)
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FDS86267P(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult MSL1 Pkg Rev 20/Dec/2018(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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