ON Semiconductor FDS6670AS
Product Information
Maximum Continuous Drain Current:
13.5 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
9 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
27 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Detailed Description:
N-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
FDS66
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 13.5A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1540pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-SOIC
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FDS6670AS Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDS6670AS. While 13.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. It provides up to 9 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 27 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product powertrench, syncfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It features n-channel 30v 13.5a (ta) 2.5w (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: fds66. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 9mohm @ 13.5a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1540pf @ 15v. The product powertrench®, syncfet™, is a highly preferred choice for users. 8-soic is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 13.5a (ta). The product carries maximum power dissipation 2.5w (ta). This product use mosfet (metal oxide) technology.
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