Maximum Continuous Drain Current:
222 A
Width:
4.67mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
108 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
214 W
Maximum Gate Source Voltage:
±20 V
Height:
15.21mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
2.3 mΩ
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 100V 222A (Tc) 214W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4V @ 700µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP2D3
Gate Charge (Qg) (Max) @ Vgs:
152nC @ 10V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11180pF @ 50V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
222A (Tc)
Customer Reference:
Power Dissipation (Max):
214W (Tc)
Technology:
MOSFET (Metal Oxide)
