ON Semiconductor FDP18N50

ON Semiconductor

Product Information

Dimensions:
10.36 x 4.9 x 9.19mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
235 W
Height:
9.19mm
Width:
4.9mm
Length:
10.36mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
N-Channel 500V 18A (Tc) 235W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP18
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
Rds On (Max) @ Id, Vgs:
265mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2860pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Customer Reference:
Power Dissipation (Max):
235W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDP18N50. The given dimensions of the product include 10.36 x 4.9 x 9.19mm. The product is available in through hole configuration. Provides up to 235 w maximum power dissipation. In addition, the height is 9.19mm. Furthermore, the product is 4.9mm wide. Its accurate length is 10.36mm. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. It has typical 35 weeks of manufacturer standard lead time. It features n-channel 500v 18a (tc) 235w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fdp18. The maximum gate charge and given voltages include 60nc @ 10v. It has a maximum Rds On and voltage of 265mohm @ 9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 2860pf @ 25v. The product unifet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). The product carries maximum power dissipation 235w (tc). This product use mosfet (metal oxide) technology.

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Datasheet FDP18N50(Technical Reference)
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MFG Site Addition 09/Mar/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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TO220B03 Pkg Drawing(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

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You can order ON Semiconductor brand products with FDP18N50 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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