ON Semiconductor FDN337N

FDN337N ON Semiconductor
FDN337N
ON Semiconductor

Product Information

Maximum Continuous Drain Current:
2.2 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7 nC @ 4.5 V
Channel Type:
N
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.94mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
65 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
FDN337
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
65mOhm @ 2.2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDN337N. While 2.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.92mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.94mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 65 mω maximum drain source resistance. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 30v 2.2a (ta) 500mw (ta) surface mount sot-23-3. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: fdn337. The maximum gate charge and given voltages include 9nc @ 4.5v. It has a maximum Rds On and voltage of 65mohm @ 2.2a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 300pf @ 10v. sot-23-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.2a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.

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Trans MOSFET N-CH 30V 2.2A 3- SuperSOT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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SSOT3 Assembly/Test Chg 7/Jul/2020(PCN Assembly/Origin)
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Mold Compound 08/April/2008(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDN337N(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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