Maximum Continuous Drain Current:
51 A
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
63 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
12.8 mΩ
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 100V 51A (Tc) 63W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
4V @ 90µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS86
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 6V
Rds On (Max) @ Id, Vgs:
12.8mOhm @ 16A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1515pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Customer Reference:
Power Dissipation (Max):
63W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDMS86183. While 51 a of maximum continuous drain current. Furthermore, the product is 5.85mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of pqfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 63 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 12.8 mω maximum drain source resistance. It has typical 20 weeks of manufacturer standard lead time. It features n-channel 100v 51a (tc) 63w (tc) surface mount 8-pqfn (5x6). The typical Vgs (th) (max) of the product is 4v @ 90µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms86. The maximum gate charge and given voltages include 14nc @ 6v. It has a maximum Rds On and voltage of 12.8mohm @ 16a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1515pf @ 50v. The product powertrench®, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 51a (tc). The product carries maximum power dissipation 63w (tc). This product use mosfet (metal oxide) technology.
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