Maximum Continuous Drain Current:
51 A
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
63 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
12.8 mΩ
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 100V 51A (Tc) 63W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
4V @ 90µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS86
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 6V
Rds On (Max) @ Id, Vgs:
12.8mOhm @ 16A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1515pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Customer Reference:
Power Dissipation (Max):
63W (Tc)
Technology:
MOSFET (Metal Oxide)
