Maximum Continuous Drain Current:
7.9 A
Transistor Material:
Si
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
104 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
36 mΩ
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
P-Channel 100V 7.9A (Ta), 50A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS86163
Gate Charge (Qg) (Max) @ Vgs:
59nC @ 10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 7.9A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
4085pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.9A (Ta), 50A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
