Category:
Power MOSFET
Dimensions:
5.1 x 5.85 x 1.05mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2825 pF @ 13 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
59 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.05mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.9 mΩ
FET Feature:
Schottky Diode (Body)
Detailed Description:
N-Channel 25V 28A (Ta), 60A (Tc) 3.3W (Ta), 59W (Tc) Surface Mount Dual Cool™56
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS85
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 10V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 28A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2825pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
Dual Cool™56
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 60A (Tc)
Customer Reference:
Power Dissipation (Max):
3.3W (Ta), 59W (Tc)
Technology:
MOSFET (Metal Oxide)
