ON Semiconductor FDMS7678

FDMS7678 ON Semiconductor
FDMS7678
FDMS7678
ON Semiconductor

Product Information

Dimensions:
5.1 x 6.25 x 1.05mm
Maximum Continuous Drain Current:
17.5 A
Transistor Material:
Si
Width:
6.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V, 28 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1810 pF @ 15 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
26 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.4 mΩ
Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS76
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 17.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2410pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
17.5A (Ta), 26A (Tc)
Customer Reference:
Power Dissipation (Max):
2.3W (Ta), 41W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMS7678. The given dimensions of the product include 5.1 x 6.25 x 1.05mm. While 17.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.25mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of power 56. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 4.5 v, 28 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1810 pf @ 15 v . Its accurate length is 5.1mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 26 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 41 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7.4 mω maximum drain source resistance. It has typical 34 weeks of manufacturer standard lead time. It features n-channel 30v 17.5a (ta), 26a (tc) 2.3w (ta), 41w (tc) surface mount 8-pqfn (5x6). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms76. The maximum gate charge and given voltages include 39nc @ 10v. It has a maximum Rds On and voltage of 5.5mohm @ 17.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2410pf @ 15v. The product powertrench®, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 17.5a (ta), 26a (tc). The product carries maximum power dissipation 2.3w (ta), 41w (tc). This product use mosfet (metal oxide) technology.

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FDMS7678, N-Channel Power Trench MOSFET 30V 26A 5.5mOhm Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer 6/8 Inch Addition 16/Jun/2014(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMS7678(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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