Category:
Power MOSFET
Dimensions:
5 x 6 x 1.05mm
Maximum Continuous Drain Current:
156 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3392 pF@ 13 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 mΩ
Detailed Description:
N-Channel 25V 28A (Ta), 49A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS75
Gate Charge (Qg) (Max) @ Vgs:
69nC @ 10V
Rds On (Max) @ Id, Vgs:
1.95mOhm @ 28A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4515pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 49A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
