ON Semiconductor FDMS4D0N12C
Product Information
Maximum Continuous Drain Current:
67 A
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
120 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
36 nC @ 6 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
106 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
4 mΩ
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 120V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
4V @ 370A
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS4
Gate Charge (Qg) (Max) @ Vgs:
82nC @ 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 67A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
120V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6460pF @ 60V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18.5A (Ta), 114A (Tc)
Customer Reference:
Power Dissipation (Max):
2.7W (Ta), 106W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search FDMS4D0N12C on website for other similar products.
We accept all major payment methods for all products including ET14519329. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with FDMS4D0N12C directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FDMS4D0N12C. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDMS4D0N12C.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519329 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519329.
Yes. We ship FDMS4D0N12C Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDMS4D0N12C. While 67 a of maximum continuous drain current. Furthermore, the product is 6mm wide. The product offers single transistor configuration. It has a maximum of 120 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of pqfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 36 nc @ 6 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 106 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 4 mω maximum drain source resistance. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 120v 18.5a (ta), 114a (tc) 2.7w (ta), 106w (tc) surface mount 8-pqfn (5x6). The typical Vgs (th) (max) of the product is 4v @ 370a. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms4. The maximum gate charge and given voltages include 82nc @ 10v. It has a maximum Rds On and voltage of 4mohm @ 67a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 120v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6460pf @ 60v. The product powertrench®, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18.5a (ta), 114a (tc). The product carries maximum power dissipation 2.7w (ta), 106w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.