Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Width:
6mm
Length:
5mm
Maximum Drain Source Resistance:
29 mΩ
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
48 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMS35
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 8.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2490pF @ 40V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-MLP (5x6), Power56
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta), 22A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
