Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
78 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
156 mΩ
Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
N-Channel 200V 3.7A (Ta), 20A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMS26
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 10V
Rds On (Max) @ Id, Vgs:
77mOhm @ 3.7A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2315pF @ 100V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.7A (Ta), 20A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
