Maximum Continuous Drain Current:
218 A
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
1.15 mΩ
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
99 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±16 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 30V 218A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS1
Gate Charge (Qg) (Max) @ Vgs:
63nC @ 4.5V
Rds On (Max) @ Id, Vgs:
1.15mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
9690pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
218A (Tc)
Customer Reference:
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
