ON Semiconductor FDMS10C4D2N

FDMS10C4D2N ON Semiconductor
FDMS10C4D2N
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
44 Weeks
Detailed Description:
N-Channel 100V 17A (Tc) 125W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS10
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 44A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4500pF @ 50V
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Customer Reference:
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMS10C4D2N. It has typical 44 weeks of manufacturer standard lead time. It features n-channel 100v 17a (tc) 125w (tc) surface mount 8-pqfn (5x6). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms10. The maximum gate charge and given voltages include 65nc @ 10v. It has a maximum Rds On and voltage of 4.2mohm @ 44a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4500pf @ 50v. The product is available in surface mount configuration. 8-pqfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 17a (tc). The product carries maximum power dissipation 125w (tc). This product use mosfet (metal oxide) technology.

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Wafer Fab 11/Nov/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMS10C4D2N(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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