Category:
Power MOSFET
Dimensions:
5.1 x 6.25 x 1.05mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
6.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
76.8 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4550 pF @ 37.5 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
55.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
104.2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
34.9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.7 mΩ
Manufacturer Standard Lead Time:
13 Weeks
Detailed Description:
N-Channel 75V 100A (Tc) 830mW (Ta), 104.2W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS037
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
75V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5915pF @ 37.5V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Customer Reference:
Power Dissipation (Max):
830mW (Ta), 104.2W (Tc)
Technology:
MOSFET (Metal Oxide)
