Category:
Power MOSFET
Dimensions:
3 x 3 x 0.95mm
Maximum Continuous Drain Current:
72 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
44 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2540 pF@ 10 V
Length:
3mm
Pin Count:
8
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.1 mΩ
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 20V 16.5A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMC85
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 16.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3380pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-MLP (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
16.5A (Tc)
Customer Reference:
Power Dissipation (Max):
2W (Ta), 41W (Tc)
Technology:
MOSFET (Metal Oxide)
