Category:
Power MOSFET
Dimensions:
3 x 3 x 0.95mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
220 V
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12.7 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
880 pF@ 100 V
Length:
3mm
Pin Count:
8
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
814 mΩ
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 220V 1A (Ta), 7A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMC26
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
366mOhm @ 1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
220V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1180pF @ 100V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
8-MLP (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1A (Ta), 7A (Tc)
Customer Reference:
Power Dissipation (Max):
2.1W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
