ON Semiconductor FDMC2523P

ON Semiconductor

Product Information

Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
42 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
Detailed Description:
P-Channel 150V 3A (Tc) 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMC25
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
270pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
8-MLP (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Customer Reference:
Power Dissipation (Max):
42W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FDMC2523P. While 1.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The package is a sort of mlp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 42 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 0.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.6 ω maximum drain source resistance. It features p-channel 150v 3a (tc) 42w (tc) surface mount 8-mlp (3.3x3.3). The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: fdmc25. The maximum gate charge and given voltages include 9nc @ 10v. It has a maximum Rds On and voltage of 1.5ohm @ 1.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 150v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 270pf @ 25v. The product qfet®, is a highly preferred choice for users. 8-mlp (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3a (tc). The product carries maximum power dissipation 42w (tc). This product use mosfet (metal oxide) technology.

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Trans MOSFET P-CH 150V 1.8A 8-Pin MLP EP(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Epoxy Change 15/Dec/2020(PCN Assembly/Origin)
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Mold Compound 17/March/2008(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMC2523P(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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