Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
42 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
Detailed Description:
P-Channel 150V 3A (Tc) 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMC25
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
270pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
8-MLP (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Customer Reference:
Power Dissipation (Max):
42W (Tc)
Technology:
MOSFET (Metal Oxide)
