Maximum Continuous Drain Current:
22 A
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
57 W
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
6.8 mΩ
Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
N-Channel 80V 64A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2.5V @ 130µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMC007
Gate Charge (Qg) (Max) @ Vgs:
44nC @ 10V
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 22A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3070pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Customer Reference:
Power Dissipation (Max):
57W (Tc)
Technology:
MOSFET (Metal Oxide)
