Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
2.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 4.5 V
Channel Type:
P
Length:
2.05mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.4 W, 900 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.775mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
P-Channel 12V 12A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
FDMA908
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 4.5V
Rds On (Max) @ Id, Vgs:
12.5mOhm @ 12A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
3957pF @ 6V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Customer Reference:
Power Dissipation (Max):
2.4W (Ta)
Technology:
MOSFET (Metal Oxide)
