ON Semiconductor FDI2532

ON Semiconductor

Product Information

Detailed Description:
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number:
FDI2532
Gate Charge (Qg) (Max) @ Vgs:
107nC @ 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 33A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5870pF @ 25V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
I2PAK (TO-262)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
8A (Ta), 79A (Tc)
Customer Reference:
Power Dissipation (Max):
310W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FDI2532. It features n-channel 150v 8a (ta), 79a (tc) 310w (tc) through hole i2pak (to-262). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. Base Part Number: fdi2532. The maximum gate charge and given voltages include 107nc @ 10v. It has a maximum Rds On and voltage of 16mohm @ 33a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 150v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 5870pf @ 25v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. i2pak (to-262) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 8a (ta), 79a (tc). The product carries maximum power dissipation 310w (tc). This product use mosfet (metal oxide) technology.

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FDB,P,I2532(Datasheets)

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