ON Semiconductor FDFMJ2P023Z
Product Information
FET Feature:
Schottky Diode (Isolated)
Detailed Description:
P-Channel 20V 2.9A (Ta) 1.4W (Ta) Surface Mount SC-75, MicroFET
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WFDFN Exposed Pad
Base Part Number:
FDFMJ2
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
112mOhm @ 2.9A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SC-75, MicroFET
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.9A (Ta)
Customer Reference:
Power Dissipation (Max):
1.4W (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship FDFMJ2P023Z Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDFMJ2P023Z. The FET features of the product include schottky diode (isolated). It features p-channel 20v 2.9a (ta) 1.4w (ta) surface mount sc-75, microfet. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wfdfn exposed pad. Base Part Number: fdfmj2. The maximum gate charge and given voltages include 6.5nc @ 4.5v. It has a maximum Rds On and voltage of 112mohm @ 2.9a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 400pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. sc-75, microfet is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2.9a (ta). The product carries maximum power dissipation 1.4w (ta). This product use mosfet (metal oxide) technology.
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