Category:
Power MOSFET
Dimensions:
1.6 x 1.6 x 0.55mm
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
55 pF @ 15 V
Length:
1.6mm
Pin Count:
6
Typical Turn-Off Delay Time:
22 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.55mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
603 mΩ
FET Feature:
Schottky Diode (Isolated)
Detailed Description:
N-Channel 30V 1.8A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Base Part Number:
FDFME3
Gate Charge (Qg) (Max) @ Vgs:
1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
299mOhm @ 1.6A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
75pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (1.6x1.6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Customer Reference:
Power Dissipation (Max):
1.4W (Ta)
Technology:
MOSFET (Metal Oxide)
