ON Semiconductor FDD86581-F085

FDD86581-F085 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 60V 25A (Tc) 48.4W (Tj) Surface Mount D-PAK (TO-252)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD865
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 25A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
880pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
D-PAK (TO-252)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Customer Reference:
Power Dissipation (Max):
48.4W (Tj)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDD86581-F085. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 60v 25a (tc) 48.4w (tj) surface mount d-pak (to-252). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fdd865. The maximum gate charge and given voltages include 19nc @ 10v. It has a maximum Rds On and voltage of 15mohm @ 25a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 880pf @ 30v. The product is available in surface mount configuration. d-pak (to-252) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 25a (tc). The product carries maximum power dissipation 48.4w (tj). This product use mosfet (metal oxide) technology.

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Mult Dev 30/Apr/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDD86581-F085(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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