Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Drain Source Resistance:
44 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
780 pF@ 50 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
13.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
62 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Typical Turn-On Delay Time:
7.6 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD863
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1035pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta), 37A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta), 62W (Tc)
Technology:
MOSFET (Metal Oxide)
