ON Semiconductor FDD86113LZ
Product Information
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.7 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
213 pF@ 50 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
29 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
170 mΩ
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 100V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD86113
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
Rds On (Max) @ Id, Vgs:
104mOhm @ 4.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
285pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.2A (Ta), 5.5A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta), 29W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FDD86113LZ Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDD86113LZ. The given dimensions of the product include 6.73 x 6.22 x 2.39mm. While 5.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 213 pf@ 50 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 20 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 29 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 170 mω maximum drain source resistance. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 100v 4.2a (ta), 5.5a (tc) 3.1w (ta), 29w (tc) surface mount to-252aa. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fdd86113. The maximum gate charge and given voltages include 6nc @ 10v. It has a maximum Rds On and voltage of 104mohm @ 4.2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 285pf @ 50v. The product powertrench®, is a highly preferred choice for users. to-252aa is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.2a (ta), 5.5a (tc). The product carries maximum power dissipation 3.1w (ta), 29w (tc). This product use mosfet (metal oxide) technology.
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