ON Semiconductor FDD6776A
Product Information
Detailed Description:
N-Channel 25V 17.7A (Ta), 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount D-PAK (TO-252)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD677
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 17.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1490pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D-PAK (TO-252)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
17.7A (Ta), 30A (Tc)
Customer Reference:
Power Dissipation (Max):
3.7W (Ta), 39W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FDD6776A Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDD6776A. It features n-channel 25v 17.7a (ta), 30a (tc) 3.7w (ta), 39w (tc) surface mount d-pak (to-252). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fdd677. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 7.5mohm @ 17.7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1490pf @ 13v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. d-pak (to-252) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 17.7a (ta), 30a (tc). The product carries maximum power dissipation 3.7w (ta), 39w (tc). This product use mosfet (metal oxide) technology.
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