ON Semiconductor FDD6612A
Product Information
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
6.7 nC @ 5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
36 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
33 mΩ
Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount D-PAK (TO-252)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD661
Gate Charge (Qg) (Max) @ Vgs:
9.4nC @ 5V
Rds On (Max) @ Id, Vgs:
20mOhm @ 9.5A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
660pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D-PAK (TO-252)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta), 30A (Tc)
Customer Reference:
Power Dissipation (Max):
2.8W (Ta), 36W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FDD6612A Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDD6612A. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 6.7 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 36 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 33 mω maximum drain source resistance. It has typical 10 weeks of manufacturer standard lead time. It features n-channel 30v 9.5a (ta), 30a (tc) 2.8w (ta), 36w (tc) surface mount d-pak (to-252). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fdd661. The maximum gate charge and given voltages include 9.4nc @ 5v. It has a maximum Rds On and voltage of 20mohm @ 9.5a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 660pf @ 15v. The product powertrench®, is a highly preferred choice for users. d-pak (to-252) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.5a (ta), 30a (tc). The product carries maximum power dissipation 2.8w (ta), 36w (tc). This product use mosfet (metal oxide) technology.
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